![]() H01L29/66- Types of semiconductor device Multistep manufacturing processes therefor.PN junction depletion layer or carrier concentration layer Details of semiconductor bodies or of electrodes thereof Multistep manufacturing processes therefor H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. ![]() H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Assignors: ENDO, TAKAHIKO, KATOH, RIICHI Application granted granted Critical Publication of US5177583A publication Critical patent/US5177583A/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links OF JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. OF JAPAN reassignment KABUSHIKI KAISHA TOSHIBA, A CORP. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from JP2-39054 external-priority Priority claimed from JP3905490A external-priority patent/JP2941335B2/en Priority claimed from JP14255090A external-priority patent/JPH0435037A/en Priority claimed from JP23136590A external-priority patent/JP3183882B2/en Application filed by Toshiba Corp filed Critical Toshiba Corp Assigned to KABUSHIKI KAISHA TOSHIBA, A CORP. Original Assignee Toshiba Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US07/639,264 Inventor Takahiko Endo Riichi Katoh Current Assignee (The listed assignees may be inaccurate. Google Patents Heterojunction bipolar transistorÄownload PDF Info Publication number US5177583A US5177583A US07/639,264 US63926491A US5177583A US 5177583 A US5177583 A US 5177583A US 63926491 A US63926491 A US 63926491A US 5177583 A US5177583 A US 5177583A Authority US United States Prior art keywords layer base emitter region semiconductor Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US5177583A - Heterojunction bipolar transistor ![]() US5177583A - Heterojunction bipolar transistor
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